onsemi · FETs & Power MOSFETs · MPN NTPF600N80S3Z
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| Gate Charge(Qg) | 15.5nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 10W |
| RDS(on) | 600mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 725pF |
| Type | N-Channel |
800V 8A 3.8V 10W 600mΩ@10V 1 N-channel N-Channel TO-220FP Single FETs, MOSFETs RoHS