onsemi NTPF360N80S3Z

onsemi · FETs & Power MOSFETs · MPN NTPF360N80S3Z

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Specifications

Gate Charge(Qg)25.3nC@10V
Drain to Source Voltage800V
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation31W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)300mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.143nF

Technical details

N-Channel 800V 13A 31W Through Hole TO-220F

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