onsemi NTPF250N65S3H

onsemi · FETs & Power MOSFETs · MPN NTPF250N65S3H

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Specifications

Gate Charge(Qg)24nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation29W
RDS(on)250mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)-
Number1 N-channel
Input Capacitance(Ciss)1.261nF
TypeN-Channel

Technical details

N-Channel 650V 13A 29W Through Hole TO-220F

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