onsemi · FETs & Power MOSFETs · MPN NTPF165N65S3H
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| Gate Charge(Qg) | 35nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 19A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 33W |
| Reverse Transfer Capacitance (Crss@Vds) | 9.2pF |
| RDS(on) | 165mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.808nF |
| Type | N-Channel |
N-Channel 650V 19A 33W Through Hole TO-220F