onsemi NTP6413ANG

onsemi · FETs & Power MOSFETs · MPN NTP6413ANG

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)100nC@10V
Output Capacitance(Coss)280pF
Current - Continuous Drain(Id)42A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation136W
Reverse Transfer Capacitance (Crss@Vds)280pF
RDS(on)28mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.8nF
TypeN-Channel

Technical details

100V 42A 4V 136W 28mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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