onsemi · FETs & Power MOSFETs · MPN NTP6412ANG
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| Gate Charge(Qg) | 100nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 58A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 167W |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| RDS(on) | 18.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.5nF |
N-Channel 100V 58A 167W Through Hole TO-220AB