onsemi NTP110N65S3HF

onsemi · FETs & Power MOSFETs · MPN NTP110N65S3HF

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Specifications

Gate Charge(Qg)62nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation240W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)110mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.635nF

Technical details

N-Channel 650V 30A 240W Through Hole TO-220

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