onsemi NTP082N65S3HF

onsemi · FETs & Power MOSFETs · MPN NTP082N65S3HF

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Specifications

Gate Charge(Qg)81nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)32pF
RDS(on)82mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.41nF
TypeN-Channel

Technical details

N-Channel 650V 40A 50W Through Hole TO-220

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