onsemi · FETs & Power MOSFETs · MPN NTP082N65S3F
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| Gate Charge(Qg) | 81nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 313W |
| Reverse Transfer Capacitance (Crss@Vds) | 722pF |
| RDS(on) | 82mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.41nF |
N-Channel 650V 40A 313W Through Hole TO-220