onsemi NTP055N65S3H

onsemi · FETs & Power MOSFETs · MPN NTP055N65S3H

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Specifications

Gate Charge(Qg)96nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)47A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation305W
Reverse Transfer Capacitance (Crss@Vds)27pF
RDS(on)55mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.305nF

Technical details

N-Channel 650V 47A 305W Through Hole TO-220

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