onsemi NTNUS3171PZT5G

onsemi · FETs & Power MOSFETs · MPN NTNUS3171PZT5G

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Specifications

Configuration-
Gate Charge(Qg)-
Drain to Source Voltage20V
Output Capacitance(Coss)3.4pF
Current - Continuous Drain(Id)200mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation200mW
Reverse Transfer Capacitance (Crss@Vds)1.6pF
RDS(on)7Ω@1.5V
Number1 P-Channel
Input Capacitance(Ciss)13pF

Technical details

20V 200mA 1V 200mW 7Ω@1.5V 1 P-Channel P-Channel SOT1123 Single FETs, MOSFETs RoHS

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