onsemi · FETs & Power MOSFETs · MPN NTNS5K0P021ZTCG
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 127mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 125mW |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| RDS(on) | 2.1Ω@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 12.8pF |
20V 127mA 1V 125mW 2.1Ω@4.5V 1 P-Channel X-DFN-3(0.7X0.5) Single FETs, MOSFETs RoHS