onsemi · FETs & Power MOSFETs · MPN NTNS41006PZTCG
No reviews yet — be the first to review onsemi NTNS41006PZTCG.
| Gate Charge(Qg) | 1.4nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 137mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 121mW |
| Reverse Transfer Capacitance (Crss@Vds) | 1.9pF |
| RDS(on) | 7Ω@4.5V |
| Input Capacitance(Ciss) | 9.1pF |
| Type | P-Channel |
30V 137mA 3V 121mW 7Ω@4.5V P-Channel Single FETs, MOSFETs RoHS