onsemi · FETs & Power MOSFETs · MPN NTNS3C68NZT5G
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| Gate Charge(Qg) | 1.8nC@4.5V |
|---|---|
| Drain to Source Voltage | 12V |
| Current - Continuous Drain(Id) | 758mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 156mW |
| RDS(on) | 440mΩ@1.8V |
| Reverse Transfer Capacitance (Crss@Vds) | 8.5pF |
| Input Capacitance(Ciss) | 67pF |
| Type | N-Channel |
12V 758mA 1V 156mW 440mΩ@1.8V N-Channel Single FETs, MOSFETs RoHS