onsemi · FETs & Power MOSFETs · MPN NTNS3A65PZT5G
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| Gate Charge(Qg) | 1.1nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 281mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 155mW |
| Reverse Transfer Capacitance (Crss@Vds) | 5.5pF |
| RDS(on) | 1.3Ω@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 44pF |
20V 281mA 1V 155mW 1.3Ω@4.5V 1 P-Channel SOT-883-3 Single FETs, MOSFETs RoHS