onsemi NTNS3164NZT5G

onsemi · FETs & Power MOSFETs · MPN NTNS3164NZT5G

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Specifications

Gate Charge(Qg)800pC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)5pF
Current - Continuous Drain(Id)361mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation217mW
Reverse Transfer Capacitance (Crss@Vds)3.4pF
RDS(on)4Ω@1.5V
Number1 N-channel
Input Capacitance(Ciss)24pF
TypeN-Channel

Technical details

N-Channel 20V 361mA 217mW Surface Mount SOT-883-3

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