onsemi · FETs & Power MOSFETs · MPN NTND31211PZTAG
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| Current - Continuous Drain(Id) | 127mA |
|---|---|
| Pd - Power Dissipation | 125mW |
| RDS(on) | 10Ω@1.5V |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 20V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| Input Capacitance(Ciss) | 12.8pF |
| Operating Temperature | -55℃~+150℃ |
127mA 125mW 10Ω@1.5V 1V FET, MOSFET Arrays RoHS