onsemi NTMYS8D0N04CTWG

onsemi · FETs & Power MOSFETs · MPN NTMYS8D0N04CTWG

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Specifications

Configuration-
Drain to Source Voltage40V
Gate Charge(Qg)10nC@10V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation38W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)8.1mΩ
Number1 N-channel
Input Capacitance(Ciss)625pF

Technical details

40V 3.5V 38W 8.1mΩ 1 N-channel LFPAK-4(5x6) Single FETs, MOSFETs RoHS

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