onsemi · FETs & Power MOSFETs · MPN NTMYS3D8N04CLTWG
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 18nC@10V |
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 55W |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF |
| RDS(on) | 3.7mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.6nF |
40V 2V 55W 3.7mΩ 1 N-channel LFPAK56E-4 Single FETs, MOSFETs RoHS