onsemi · FETs & Power MOSFETs · MPN NTMYS2D4N04CTWG
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| Gate Charge(Qg) | 32nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 3.9W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.1nF |
40V 30A 3.5V 3.9W 1 N-channel LFPAK-4(5x6) Single FETs, MOSFETs RoHS