onsemi · FETs & Power MOSFETs · MPN NTMYS1D2N04CLTWG
No reviews yet — be the first to review onsemi NTMYS1D2N04CLTWG.
| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 258A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 134W |
| Reverse Transfer Capacitance (Crss@Vds) | 118pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.33nF |
40V 258A 134W 1 N-channel DFN-5(5.9x4.9) Single FETs, MOSFETs RoHS