onsemi NTMYS025N06CLTWG

onsemi · FETs & Power MOSFETs · MPN NTMYS025N06CLTWG

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)5.8nC@10V
Output Capacitance(Coss)172pF
Current - Continuous Drain(Id)8.5A;21A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation3.8W;24W
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)27.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)330pF
TypeN-Channel

Technical details

60V 2V 27.5mΩ@10V 1 N-channel N-Channel LFPAK-4(5x6) Single FETs, MOSFETs RoHS

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