onsemi NTMYS021N06CLTWG

onsemi · FETs & Power MOSFETs · MPN NTMYS021N06CLTWG

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Specifications

Configuration-
Gate Charge(Qg)2.5nC@4.5V
Drain to Source Voltage60V
Output Capacitance(Coss)210pF
Current - Continuous Drain(Id)27A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation28W
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)21mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)410pF

Technical details

N-Channel 60V 27A Surface Mount LFPAK-4(5x6)

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