onsemi · FETs & Power MOSFETs · MPN NTMYS011N04CTWG
No reviews yet — be the first to review onsemi NTMYS011N04CTWG.
| Configuration | - |
|---|---|
| Drain to Source Voltage | 40V |
| Gate Charge(Qg) | 7.9nC@10V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 420pF |
40V 3.5V 1 N-channel LFPAK-4(5x6) Single FETs, MOSFETs RoHS