onsemi · FETs & Power MOSFETs · MPN NTMTS1D6N10MCTXG
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 106nC@10V |
| Output Capacitance(Coss) | 4.26nF |
| Current - Continuous Drain(Id) | 273A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 291W |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| RDS(on) | 1.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.63nF |
| Type | N-Channel |
N-Channel 100V 273A 291W Surface Mount DFNW-8(8.4x8.3)