onsemi · FETs & Power MOSFETs · MPN NTMTS1D5N08H
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| Gate Charge(Qg) | 125nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 36A;255A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 4.2W;208W |
| RDS(on) | 1.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.22nF |
80V 4V 1.5mΩ@10V 1 N-channel DFNW-8(8.3x8.4) Single FETs, MOSFETs RoHS