onsemi · FETs & Power MOSFETs · MPN NTMTS0D6N04CLTXG
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 554.5A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 245.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 299pF |
| RDS(on) | 0.42mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 16.013nF |
40V 554.5A 1.2V 245.4W 0.42mΩ@10V 1 N-channel DFNW-8(8.4x8.3) Single FETs, MOSFETs RoHS