onsemi · FETs & Power MOSFETs · MPN NTMTS0D4N04CTXG
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| Gate Charge(Qg) | 251nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 558A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 244W |
| Reverse Transfer Capacitance (Crss@Vds) | 390pF |
| RDS(on) | 0.45mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 16.5nF |
40V 558A 244W Surface Mount DFNW-8(8.4x8.3)