onsemi · FETs & Power MOSFETs · MPN NTMTS0D4N04CLTXG
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| Gate Charge(Qg) | 341nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 79.8A;553.8A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 5W;244W |
| RDS(on) | 0.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 20.6nF |
40V 2.5V 0.4mΩ@10V 1 N-channel DFNW-8(8.3x8.4) Single FETs, MOSFETs RoHS