onsemi · FETs & Power MOSFETs · MPN NTMTS001N06CLTXG
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| Gate Charge(Qg) | 165nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 398.2A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 244W |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF |
| RDS(on) | 0.81mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 12.3nF |
60V 398.2A 244W 0.81mΩ@10V 1 N-channel DFNW-8(8.4x8.3) Single FETs, MOSFETs RoHS