onsemi · FETs & Power MOSFETs · MPN NTMT185N60S5H
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 25nC@10V |
| Current - Continuous Drain(Id) | 15A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.3V |
| Pd - Power Dissipation | 116W |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF |
| RDS(on) | 185mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.35nF |
| Type | N-Channel |
600V 15A 4.3V 116W 185mΩ@10V 1 N-channel N-Channel TDFN-4(8x8) Single FETs, MOSFETs RoHS