onsemi · FETs & Power MOSFETs · MPN NTMT090N65S3HF
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| Gate Charge(Qg) | 66nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 36A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 272W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 90mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.93nF |
| Type | N-Channel |
N-Channel 650V 36A 272W Surface Mount PQFN-4(8x8)