onsemi · FETs & Power MOSFETs · MPN NTMT064N65S3H
No reviews yet — be the first to review onsemi NTMT064N65S3H.
| Gate Charge(Qg) | 82nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 260W |
| RDS(on) | 64mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.745nF |
N-Channel 650V 40A 260W Surface Mount TDFN-4(8x8)