onsemi · FETs & Power MOSFETs · MPN NTMT061N60S5F
No reviews yet — be the first to review onsemi NTMT061N60S5F.
| Gate Charge(Qg) | 76nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 41A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.8V |
| Pd - Power Dissipation | 255W |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF |
| RDS(on) | 61mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.175nF |
600V 41A 4.8V 255W 61mΩ@10V 1 N-channel TDFN4-2(8x8) Single FETs, MOSFETs RoHS