onsemi NTMS7N03R2G

onsemi · FETs & Power MOSFETs · MPN NTMS7N03R2G

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Specifications

Drain to Source Voltage30V
Current - Continuous Drain(Id)4.8A
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation-
RDS(on)23mΩ@10V
Number1 N-channel

Technical details

30V 4.8A 3V 23mΩ@10V 1 N-channel SOIC-8 Single FETs, MOSFETs RoHS

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