onsemi · FETs & Power MOSFETs · MPN NTMS5P02R2G
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| Gate Charge(Qg) | 20nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 5.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.25V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 380pF |
| RDS(on) | 33mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.9nF |
| Type | P-Channel |
20V 5.4A 1.25V 2.5W 33mΩ@4.5V 1 P-Channel P-Channel SOIC-8 Single FETs, MOSFETs RoHS