onsemi · FETs & Power MOSFETs · MPN NTMS4939NR2G
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| Gate Charge(Qg) | 12.4nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 12.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF |
| RDS(on) | 8.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2nF |
30V 12.5A 2.5V 2W 8.4mΩ@10V 1 N-channel SOIC-8 Single FETs, MOSFETs RoHS