onsemi · FETs & Power MOSFETs · MPN NTMS4937NR2G
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 38.5nC@10V |
| Current - Continuous Drain(Id) | 8.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 810mW |
| RDS(on) | 6.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.563nF |
30V 8.6A 2.5V 810mW 6.5mΩ@10V 1 N-channel SOIC-8 Single FETs, MOSFETs RoHS