onsemi NTMS4916NR2G

onsemi · FETs & Power MOSFETs · MPN NTMS4916NR2G

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Specifications

Gate Charge(Qg)28nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)11.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.98W
Reverse Transfer Capacitance (Crss@Vds)205pF
RDS(on)9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.376nF

Technical details

N-Channel 30V 11.6A 1.98W Surface Mount SO-8

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