onsemi NTMS4816NR2G

onsemi · FETs & Power MOSFETs · MPN NTMS4816NR2G

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Specifications

Gate Charge(Qg)18.3nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)220pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.37W
Reverse Transfer Capacitance (Crss@Vds)126pF
RDS(on)16mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.06nF
TypeN-Channel

Technical details

N-Channel 30V 9A 1.37W Surface Mount SO-8

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