onsemi · FETs & Power MOSFETs · MPN NTMS4807NR2G
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| Gate Charge(Qg) | 24nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 14.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 860mW |
| RDS(on) | 6.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.9nF |
30V 14.8A 3V 860mW 6.1mΩ@10V 1 N-channel SOIC-8 Single FETs, MOSFETs RoHS