onsemi · FETs & Power MOSFETs · MPN NTMS4177PR2G
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| Gate Charge(Qg) | 55nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 6.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 840mW |
| RDS(on) | 12mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.1nF |
P-Channel 30V 6.6A 840mW Surface Mount SOIC-8