onsemi · FETs & Power MOSFETs · MPN NTMS10P02R2G
No reviews yet — be the first to review onsemi NTMS10P02R2G.
| Gate Charge(Qg) | 70nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 1.67nF |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 1.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.01nF |
| RDS(on) | 20mΩ@2.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.64nF |
| Type | P-Channel |
P-Channel 20V 10A 1.6W Surface Mount SOIC-8