onsemi · FETs & Power MOSFETs · MPN NTMKE4890NT1G
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 104nC@10V |
| Current - Continuous Drain(Id) | 155A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 65W |
| RDS(on) | 2.5mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Input Capacitance(Ciss) | 7.1nF |
| Type | N-Channel |
30V 155A 2.4V 65W 2.5mΩ@4.5V N-Channel Single FETs, MOSFETs RoHS