onsemi · FETs & Power MOSFETs · MPN NTMJS1D4N06CLTWG
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| Gate Charge(Qg) | 103nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 39A;262A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 4W;180W |
| RDS(on) | 1.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.43nF |
N-Channel 60V 39A 262A 4W 180W Surface Mount LFPAK-8