onsemi · FETs & Power MOSFETs · MPN NTMJS1D15N03CGTWG
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 94nC@10V |
| Output Capacitance(Coss) | 3.6nF |
| Current - Continuous Drain(Id) | 257A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 66pF |
| RDS(on) | 1.15mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.3nF |
| Type | N-Channel |
30V 257A 2.2V 125W 1.15mΩ@10V 1 N-channel N-Channel LFPAK-8 Single FETs, MOSFETs RoHS