onsemi · FETs & Power MOSFETs · MPN NTMJS0D9N04CTWG
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 117nC@10V |
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 180W |
| Reverse Transfer Capacitance (Crss@Vds) | 127pF |
| RDS(on) | 0.81mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.4nF |
40V 4V 180W 0.81mΩ 1 N-channel LFPAK-8 Single FETs, MOSFETs RoHS