onsemi · FETs & Power MOSFETs · MPN NTMJS0D8N04CLTWG
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| Gate Charge(Qg) | 162nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 56A;368A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 4.2W;180W |
| RDS(on) | 0.72mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.6nF |
N-Channel 40V 56A 368A 4.2W 180W Surface Mount LFPAK-8