onsemi · FETs & Power MOSFETs · MPN NTMJS0D7N03CGTWG
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| Gate Charge(Qg) | 147nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 5.8nF |
| Current - Continuous Drain(Id) | 410A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 188W |
| Reverse Transfer Capacitance (Crss@Vds) | 88pF |
| RDS(on) | 0.65mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 12.3nF |
| Type | N-Channel |
30V 410A 2.2V 188W 0.65mΩ@10V 1 N-channel N-Channel LFPAK-8 Single FETs, MOSFETs RoHS