onsemi NTMFSC4D2N10MC

onsemi · FETs & Power MOSFETs · MPN NTMFSC4D2N10MC

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)42nC@10V
Output Capacitance(Coss)1.67nF
Current - Continuous Drain(Id)116A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation122W
RDS(on)12mΩ@6V
Reverse Transfer Capacitance (Crss@Vds)29pF
Number1 N-channel
Input Capacitance(Ciss)2.856nF
TypeN-Channel

Technical details

N-Channel 100V 116A 122W Surface Mount DFN-8(4.9x5.8)

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